B5817W-b5819w (features ) extremely low v f . low stored change,majority carrier conduction. low power loss/high efficient for use in low voltage, high frequency inverters. free wheeling, and polarity protection applications. maximum rating @ ta=25 unless otherwise specified parameter symbol B5817W b5818w b5819w unit non-repetitive peak reverse voltage v rsm 24 36 48 v peak repetitive peak reverse voltage working peak reverse voltage dc reverse voltage v rrm v rwm v r 20 30 40 v rms reverse voltage v r(rms) 14 21 28 v average rectified output current i o 1 a peak forward surge current @=8.3ms i fsm 25 a power dissipation p d 250 mw thermal resistance junction to ambient r ja 80 /w storage temperature t j , t stg -65 to +125
B5817W-b5819w electrical c haracteristics @ ta=2 5 unless otherwise specified parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r =1ma B5817W b5818w b5819w 20 30 40 v reverse voltage leakage current i r v r =20v B5817W v r =30v b5818w v r =40v b5819w 1 ma B5817W i f =1a i f =3a 0.45 0.75 b5818w i f =1a i f =3a 0.55 0.875 forward voltage v f b5819w i f =1a i f =3a 0.6 0.9 v diode capacitance c d v r =4v,f=1mhz 120 pf ordering information type no. marking package code B5817W sj sod-123 b5818w sk sod-123 b5819w sl sod-123 B5817W-b5819w
typical characteristics @ ta=25 unless otherwise specified
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